inchange semiconductor product specification silicon npn power transistors 2sd1266 2SD1266A description with to-220fa package high forward current transfer ratio h fe which has satisfactory linearity low collector saturation voltage complement to type 2sb941/941a applications for power amplification pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2sd1266 60 v cbo collector-base voltage 2SD1266A open emitter 80 v 2sd1266 60 v ceo collector-emitter voltage 2SD1266A open base 80 v v ebo emitter-base voltage open collector 6 v i c collector current 3 a i cm collector current-peak 5 a t a =25 2 p c collector power dissipation t c =25 35 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2sd1266 2SD1266A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2sd1266 60 v ceo collector-emitter voltage 2SD1266A i c =30ma ,i b =0 80 v v cesat collector-emitter saturation voltage i c =3a, i b =0.375a 1.2 v v be base-emitter voltage i c =3a ; v ce =4v 1.8 v i ebo emitter cut-off current v eb =6v; i c =0 1 ma 2sd1266 v ce =30v; i b =0 i ceo collector cut-off current 2SD1266A v ce =60v; i b =0 0.3 ma 2sd1266 v ce =60v; v be =0 i ces collector cut-off current 2SD1266A v ce =80v; v be =0 0.2 ma h fe-1 dc current gain i c =1a ; v ce =4v 70 250 h fe-2 dc current gain i c =3a ; v ce =4v 10 f t transition frequency i c =0.5a; v ce =10v,f=10mhz 30 mhz switching times t on turn-on time 0.5 s t stg storage time 2.5 s t f fall time i c =1a i b1 =0.1a ,i b2 =-0.1a v cc =50v, 0.4 s ? h fe-1 classifications q p 70-150 120-250
inchange semiconductor product specification 3 silicon npn power transistors 2sd1266 2SD1266A package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2sd1266 2SD1266A
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